- Home
- Download Datasheet
- SS8550-Y2
SS8550-Y2 Datasheet
Datasheet specifications
| Datasheet's name | SS8550-Y2 |
|---|---|
| File size | 83.196 KB |
| File type | |
| Number of pages | 4 |
Download Datasheet SS8550-Y2 |
Download Datasheet |
|---|
Other documentations
No other documentation was found!
Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: MDD(Microdiode Electronics) SS8550-Y2
- Transistor Type: PNP
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 1.5A
- Power Dissipation (Pd): 300mW
- Transition Frequency (fT): 100MHz
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 25V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@800mA,80mA
- Package: SOT-23
- Manufacturer: MDD(Microdiode Electronics)